Samsung SSD MZ-M6E500BW 860 EVO mSATA 250GB Internal SSD Single Unit Version
Samsung SSD MZ-M6E500BW 860 EVO mSATA 250GB Internal SSD Single Unit Version
The SSD you trust
The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.
*Sources: NPD (US data from Jan. 2015 to Oct. 2017)
Enhanced performance
Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.
* Performance may vary based on SSD's firmware version and system hardware & configuration. Sequential write performance measurements are based on Intelligent TurboWrite technology. Sequential performance measurements based on CrystalDiskMark v.5.0.2 and I0meter 1.1.0. The sequential write performances are Intelligent TurboWrite region are 300 MB/s for 250/500 GB and 500 MB/s for 1 TB. * Test system configuration: Intel Core i5-3550 CPU @ 3.3 GHz, 4 GB, OS - Windows 7 Ultimate x64, Chipset: ASUS P8H77-V .
* The TurboWrite buffer size varies based on the capacity of the SSD; 12 GB model, 22 GB for 500 GB model, 42 GB for 1 TB model and 2/4 TB for 78 GB.
Boosted endurance
Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications. The Samsung 860 EVO with V-NAND technology is backed by a 5-year limited warranty.*
* Warrantied TBW for 860 EVO: 150 TBW for 250 GB model, 300 TBW for 500 GB model, 600 TBW for 1 TB model, 1,200 TBW for 2 TB model and 2,400 TBW for 4 TB model. * 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package.
Series
SSD 860 EVO
Usage Application
Client PCs
Interface
SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s and SATA 1.5 Gb/s interface
Sequential Read Speed
Up to 550 MB/s Sequential Read
Performance may vary based on system hardware and configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write
Performance may vary based on system hardware and configuration
Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
Performance may vary based on system hardware and configuration
Random Write Speed
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write
Random Write (4KB, QD1): Up to 42,000 IOPS Random Write
Performance may vary based on system hardware and configuration
Controller
Samsung MJX Controller
NAND Type
Samsung V-NAND 3bit MLC
Trim Support
Yes
AES Encryption
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
S.M.A.R.T. Support
Yes
GC (Garbage Collection)
Auto Garbage Collection Algorithm
WWN Support
World Wide Name supported
Device Sleep Mode Support
Yes
Internal Storage
Yes
Power Consumption (W)
Average: 2.2 W
>Maximum: 4.5 W (Burst mode)
Actual power consumption may vary depending on system hardware and configuration
Reliability (MTBF)
1.5 Million Hours Reliability (MTBF)
Operating Temperature
0 - 70 oC Operating Temperature
The SSD you trust
The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.
*Sources: NPD (US data from Jan. 2015 to Oct. 2017)
Enhanced performance
Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.
* Performance may vary based on SSD's firmware version and system hardware & configuration. Sequential write performance measurements are based on Intelligent TurboWrite technology. Sequential performance measurements based on CrystalDiskMark v.5.0.2 and I0meter 1.1.0. The sequential write performances are Intelligent TurboWrite region are 300 MB/s for 250/500 GB and 500 MB/s for 1 TB. * Test system configuration: Intel Core i5-3550 CPU @ 3.3 GHz, 4 GB, OS - Windows 7 Ultimate x64, Chipset: ASUS P8H77-V .
* The TurboWrite buffer size varies based on the capacity of the SSD; 12 GB model, 22 GB for 500 GB model, 42 GB for 1 TB model and 2/4 TB for 78 GB.
Boosted endurance
Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications. The Samsung 860 EVO with V-NAND technology is backed by a 5-year limited warranty.*
* Warrantied TBW for 860 EVO: 150 TBW for 250 GB model, 300 TBW for 500 GB model, 600 TBW for 1 TB model, 1,200 TBW for 2 TB model and 2,400 TBW for 4 TB model. * 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package.
Series
SSD 860 EVO
Usage Application
Client PCs
Interface
SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s and SATA 1.5 Gb/s interface
Sequential Read Speed
Up to 550 MB/s Sequential Read
Performance may vary based on system hardware and configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write
Performance may vary based on system hardware and configuration
Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
Performance may vary based on system hardware and configuration
Random Write Speed
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write
Random Write (4KB, QD1): Up to 42,000 IOPS Random Write
Performance may vary based on system hardware and configuration
Controller
Samsung MJX Controller
NAND Type
Samsung V-NAND 3bit MLC
Trim Support
Yes
AES Encryption
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
S.M.A.R.T. Support
Yes
GC (Garbage Collection)
Auto Garbage Collection Algorithm
WWN Support
World Wide Name supported
Device Sleep Mode Support
Yes
Internal Storage
Yes
Power Consumption (W)
Average: 2.2 W
>Maximum: 4.5 W (Burst mode)
Actual power consumption may vary depending on system hardware and configuration
Reliability (MTBF)
1.5 Million Hours Reliability (MTBF)
Operating Temperature
0 - 70 oC Operating Temperature
